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HM1607 - N-Channel Trench Power MOSFET

General Description

The HM1607 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Rugged EAS capability and ultra low RDS(ON) is suitable for PWM.

Key Features

  • VDS=75V; ID=150A@ VGS=10V; RDS(ON).

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N-Channel Trench Power MOSFET HM1607 General Description The HM1607 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM. Features ● VDS=75V; ID=150A@ VGS=10V; RDS(ON)<6.3mΩ @ VGS=10V ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply To-220 Top View Schematic Diagram VDS = 75V ID= 150A RDS(ON)= 5.0mΩ Package Marking and Ordering Information Device Marking Device Device Package HM1607 HM1607 TO-220 Reel Size - Table 1.