HM16N50 - 500V N-Channel MOSFET

Product Overview

H&M Semiconductor

Datasheet Details

Part number	HM16N50
Manufacturer	H&M Semiconductor
File Size	921.04 KB
Description	500V N-Channel MOSFET
Datasheet	HM16N50 Datasheet
Additional preview pages of the HM16N50 datasheet.

Product details

Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

- 16A, 500V, RDS(on)typ. = 305mΩ@VGS = 10 V - Low gate charge ( typical 52nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy.

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Published: Jun 30, 2025 |