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HM1P15MR - Power MOSFET

Key Features

  • RDSON < 900 mΩ@VGS = -10 V.
  • RDSON < 1000 mΩ@VGS = -4.5V.
  • Gross Die = 12000.

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HM1P15MR Power MOSFET Datasheet P-Channel Enhancement Mode MOSFET FEATURES ◆ RDSON < 900 mΩ@VGS = -10 V ◆ RDSON < 1000 mΩ@VGS = -4.5V ◆ Gross Die = 12000 APPLICATIONS ◆ Battery Charge ◆ Load Switching ◆ Power Converter   D G S Schematic diagram   Marking and pin Assignment   Absolute Maximum Ratings (TA=25°C unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous @ TA =25°C Drain Current-Pulsed @ TA =25°C Note1 ID IDM Maximum Power Dissipation PD Storage Temperature Range TSTG Operating Junction Temperature Range Thermal Resistance, Junction-to-Ambient Note2 TJ RθJA  Ratings -150 ±20 -1 -3 2.