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HM20DN06KA - Dual N-Channel Enhancement Mode Power MOSFET

General Description

The HM20DN06KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =60V,ID =20A RDS(ON).

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HM20DN06KA Dual N-Channel Enhancement Mode Power MOSFET Description The HM20DN06KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =20A RDS(ON) <35mΩ @ VGS=10V RDS(ON) <40mΩ @ VGS=4.