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HM20P02Q - P-Channel Enhancement Mode Power MOSFET

General Description

The HM20P02Q uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS = -20V,ID = -20A RDS(ON) < 28mΩ @ VGS=-4.5V RDS(ON) < 40mΩ @ VGS=-2.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

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Full PDF Text Transcription for HM20P02Q (Reference)

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P-Channel Enhancement Mode Power MOSFET HM20P02Q Description The HM20P02Q uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with...

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ology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -20V,ID = -20A RDS(ON) < 28mΩ @ VGS=-4.5V RDS(ON) < 40mΩ @ VGS=-2.5V ● High power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● Motor drive ● Load switch ● Power management D G S Schematic diagram Pin Assignment DFN 3.3x3.