HM2301DR - P-Channel 20V (D-S) MOSFET

Product Overview

H&M Semiconductor

Part number	HM2301DR
Manufacturer	H&M Semiconductor
File Size	385.91 KB
Description	P-Channel 20V (D-S) MOSFET
Datasheet	HM2301DR Datasheet
Additional preview pages of the HM2301DR datasheet.

The +0'5 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Power Management in Note book Portable Equipmen

RDS(ON)= 0.48Ω @VGS=-4.5V.
RDS(ON)= 0.67Ω @VGS=-2.5V.
RDS(ON)= 0.95Ω @VGS=-1.8V.
RDS(ON)= 2.20Ω @VGS=-1.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.
Capable doing Cu wire bonding.
Load Switch.
DSC Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Maximum Ratings -20 ±6 Unit V V.
Th Oct, 201.

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Published: Nov 27, 2018 |