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HM2302E - N-Channel Enhancement Mode Power MOSFET

Product Overview

H&M Semiconductor

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HM2302E N-Channel Enhancement Mode Power MOSFET by H&M Semiconductor - Datasheet Preview — Datasheet preview – HM2302E

Datasheet Details

Part number	HM2302E
Manufacturer	H&M Semiconductor
File Size	693.00 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM2302E Datasheet
Additional preview pages of the HM2302E datasheet.

HM2302E Product details

Description

The HM2302E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a battery protection or in other switching application.

Features

VDS = 15V,ID =2.0A RDS(ON) < 55mΩ @ VGS =4.5V RDS(ON).

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Published: Nov 27, 2018 |