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HM2319A - P-Channel Enhancement Mode Power MOSFET

General Description

The HM2319A uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch and battery protection applications.

Key Features

  • VDS = -40V,ID = -5.0A RDS(ON) < 34mΩ @ VGS=-10V RDS(ON) < 50mΩ @ VGS=-4.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package D G S Schematic diagram 2319A Marking and pin assignment.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HM2319A P-Channel Enhancement Mode Power MOSFET Description The HM2319A uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch and battery protection applications. General Features ● VDS = -40V,ID = -5.0A RDS(ON) < 34mΩ @ VGS=-10V RDS(ON) < 50mΩ @ VGS=-4.