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HM2809D - 60V P-Channel power field effect transistors

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H&M Semiconductor

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HM2809D 60V P-Channel power field effect transistors by H&M Semiconductor - Datasheet Preview — Datasheet preview – HM2809D

Datasheet Details

Part number	HM2809D
Manufacturer	H&M Semiconductor
File Size	1.01 MB
Description	60V P-Channel power field effect transistors
Datasheet	HM2809D Datasheet
Additional preview pages of the HM2809D datasheet.

Product details

Description

The HM2809D is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

Features

RDS(ON)≦188mΩ@VGS=-10V.
RDS(ON)≦266mΩ@VGS=-4.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.
Capable doing Cu wire bonding.

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Published: Jul 1, 2025 |