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HM2819D - Dual P-Channel Enhancement Mode Power MOSFET

General Description

The HM2819D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS = -40V,ID = -5.0A RDS(ON).

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HM2819D Dual P-Channel Enhancement Mode Power MOSFET Description The HM2819D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -40V,ID = -5.0A RDS(ON) <135mΩ @ VGS=-2.5V RDS(ON) < 80mΩ @ VGS=-4.