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HM2N20PR - N-Channel Enhancement Mode Power MOSFET

Product Overview

H&M Semiconductor

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HM2N20PR N-Channel Enhancement Mode Power MOSFET by H&M Semiconductor - Datasheet Preview — Datasheet preview – HM2N20PR

Datasheet Details

Part number	HM2N20PR
Manufacturer	H&M Semiconductor
File Size	444.91 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM2N20PR Datasheet
Additional preview pages of the HM2N20PR datasheet.

HM2N20PR Product details

Description

The HM2N20PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS = 200V,ID =2A RDS(ON) < 580mΩ @ VGS=10V (Typ:520mΩ).
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Excellent package for good heat dissipation.

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Published: Nov 27, 2018 |