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HM2N25MR - 250V N-Channel Enhancement Mode MOSFET

General Description

The HM2N25MR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS = 250V,ID =2A RDS(ON) < 1500mΩ @ VGS=10V (Typ:1300mΩ) High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Excellent package for good heat dissipation.

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HM2N25MR 250V N-Channel Enhancement Mode MOSFET Description The HM2N25MR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.