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HM2N25MR - 250V N-Channel Enhancement Mode MOSFET

Product Overview

H&M Semiconductor

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HM2N25MR 250V N-Channel Enhancement Mode MOSFET by H&M Semiconductor - Datasheet Preview — Datasheet preview – HM2N25MR

Datasheet Details

Part number	HM2N25MR
Manufacturer	H&M Semiconductor
File Size	946.40 KB
Description	250V N-Channel Enhancement Mode MOSFET
Datasheet	HM2N25MR Datasheet
Additional preview pages of the HM2N25MR datasheet.

HM2N25MR Product details

Description

The HM2N25MR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS = 250V,ID =2A RDS(ON) < 1500mΩ @ VGS=10V (Typ:1300mΩ) High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Excellent package for good heat dissipation.

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Published: Jun 21, 2025 |