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HM3018KR - N-Channel Enhancement Mode Power MOSFET

Key Features

  • s 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. 5) Easy to parallel.
  • ESD>500V.
  • We declare that the material of product compliance with RoHS requirements.
  • S- Prefix for Automotive and Other.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon N-channel MOSFET 100 mA, 30 V • Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. 5) Easy to parallel. • ESD>500V • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. MAXIMUM RATINGS Parameter Symbol Drain-source voltage VDSS Gate-source voltage VGSS Drain current Continuous Pulsed Total power dissipation (Tc=25°C) ID IDP∗1 PD∗2 Channel temperature Tch Storage temperature Tstg ∗1 Pw≤10µs, Duty cycle≤1% ∗2 With each pin mounted on the recommended lands.