HM30DN02D - N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

General Description

The HM30DN02D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

VDS =20V,ID =30A RDS(ON).

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HM30DN02D n-channel enhancement mode power mosfet by H&M Semiconductor - Datasheet Preview

Datasheet Details

Part number	HM30DN02D
Manufacturer	H&M Semiconductor
File Size	611.48 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM30DN02D Datasheet

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HM30DN02D N-Channel Enhancement Mode Power MOSFET Description The HM30DN02D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =20V,ID =30A RDS(ON) <7mΩ @ VGS=10V RDS(ON) <8mΩ @ VGS=4.