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HM30P03Q - P-Channel Enhancement Mode MOSFET

General Description

Marking and pin Assignment Markin g and pin assignment Package Marking and Ordering Information Device Marking Device Device Package HM34 +034   ')1;/ Reel Size - Tape width - Quantity -    

Key Features

  • VDSS=-30V／VGSS=±20V／ID=-30A RDS(ON)=14mΩ(max. )@VGS=-10V RDS(ON)=22mΩ(max. )@VGS=-4.5V.
  • Low Dense Cell Design.
  • Reliable and Rugged.
  • Advanced trench process technology.

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Full PDF Text Transcription (Reference)

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HM30P03Q -30VDS／±20VGS／-30A(ID) P-Channel Enha ncement Mode MOSFET Features  VDSS=-30V／VGSS=±20V／ID=-30A RDS(ON)=14mΩ(max.)@VGS=-10V RDS(ON)=22mΩ(max.)@VGS=-4.