The HM30P06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.
| Part number | HM30P06D |
|---|---|
| Manufacturer | H&M Semiconductor |
| File Size | 581.81 KB |
| Description | P-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 HM30P06D Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| HM30P10K | P-Channel Enhancement Mode Power MOSFET | H&M semi |
| HM3019 | NPN EPITAXIAL PLANAR TRANSISTOR | Hi-Sincerity Mocroelectronics |
| HM3019 | WHITE LED Step-up Converter | H&M semi |
| HM3-6514-9 | 1024 x 4 CMOS RAM | Intersil Corporation |
| HM3-6514B-9 | 1024 x 4 CMOS RAM | Intersil Corporation |
| Part Number | Description |
|---|---|
| HM30P02K | P-Channel Enhancement Mode Power MOSFET |
| HM30P03Q | P-Channel Enhancement Mode MOSFET |
| HM3018 | N-Channel Enhancement Mode Power MOSFET |
| HM3018JR | N-Channel Enhancement Mode Power MOSFET |
| HM3018KR | N-Channel Enhancement Mode Power MOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
