Datasheet4U Logo Datasheet4U.com

HM35N03D - N-Channel Enhancement Mode Power MOSFET

General Description

The HM35N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =30V,ID =35A RDS(ON) < 5.5mΩ @ VGS=10V RDS(ON) < 9.5mΩ @ VGS=4.5V.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HM35P03K P-Channel MOSFET H&M semi
HM3-6514-9 1024 x 4 CMOS RAM Intersil Corporation
HM3-6514B-9 1024 x 4 CMOS RAM Intersil Corporation
HM3-6514S-9 1024 x 4 CMOS RAM Intersil Corporation
HM3-65764 High Speed CMOS SRAM Matra Design Semiconductor

Other Datasheets by H&M Semiconductor

Part Number Description
HM35N03Q MOSFET
HM3501 5V/1.8A 150KHz 45V Buck DC to DC Converter
HM3512 5V/2.4A 150KHz 40V Buck DC to DC Converter
HM35P03 P-Channel Enhancement Mode Power MOSFET
HM35P06 P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HM35N03D N-Channel Enhancement Mode Power MOSFET Description The HM35N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =35A RDS(ON) < 5.5mΩ @ VGS=10V RDS(ON) < 9.5mΩ @ VGS=4.