The HM35P06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.
| Part number | HM35P06 |
|---|---|
| Manufacturer | H&M Semiconductor |
| File Size | 738.75 KB |
| Description | P-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 HM35P06 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| HM35P03K | P-Channel MOSFET | H&M semi |
| HM3-6514-9 | 1024 x 4 CMOS RAM | Intersil Corporation |
| HM3-6514B-9 | 1024 x 4 CMOS RAM | Intersil Corporation |
| HM3-6514S-9 | 1024 x 4 CMOS RAM | Intersil Corporation |
| HM3-65764 | High Speed CMOS SRAM | Matra Design Semiconductor |
| Part Number | Description |
|---|---|
| HM35P06K | P-Channel Enhancement Mode Power MOSFET |
| HM35P03 | P-Channel Enhancement Mode Power MOSFET |
| HM3501 | 5V/1.8A 150KHz 45V Buck DC to DC Converter |
| HM3512 | 5V/2.4A 150KHz 40V Buck DC to DC Converter |
| HM35N03D | N-Channel Enhancement Mode Power MOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
