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HM35P03 - P-Channel Enhancement Mode Power MOSFET

General Description

The HM35P03K uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

Key Features

  • VDS = -30V,ID = -35A RDS(ON) < 25mΩ @ VGS=-4.5V RDS(ON) < 16mΩ @ VGS=-10V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

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HM35P03 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM35P03K uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. GENERAL FEATURES ● VDS = -30V,ID = -35A RDS(ON) < 25mΩ @ VGS=-4.