HM40N25F - 250V N-Channel MOSFET

This page provides the datasheet information for the HM40N25F, a member of the HM40N25 250V N-Channel MOSFET family.

Product Overview

H&M Semiconductor

Datasheet Details

Part number	HM40N25F
Manufacturer	H&M Semiconductor
File Size	0.99 MB
Description	250V N-Channel MOSFET
Datasheet	HM40N25F Datasheet
Additional preview pages of the HM40N25F datasheet.

HM40N25F Product details

Description

This Power MOSFET is produced using H&M semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

- 40A, 250V, RDS(on) typ. = 0.079Ω@VGS = 10 V - Low gate charge ( typical 55 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability HM40N25 HM40N25F Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2).

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Published: Jul 1, 2025 |