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HM40N25F - 250V N-Channel MOSFET

Download the HM40N25F datasheet PDF. This datasheet also covers the HM40N25 variant, as both devices belong to the same 250v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This Power MOSFET is produced using H&M semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • - 40A, 250V, RDS(on) typ. = 0.079Ω@VGS = 10 V - Low gate charge ( typical 55 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability HM40N25 HM40N25F Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HM40N25-HMSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by H&M Semiconductor

Part Number Description
HM40N25 250V N-Channel MOSFET
HM40N20D N-Channel Enhancement Mode Power MOSFET
HM40N04D N-Channel Enhancement Mode Power MOSFET
HM40N04K N-Channel Enhancement Mode Power MOSFET
HM40N06D N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HM40N25 / HM40N25F HM40N25 / HM40N25F 250V N-Channel MOSFET General Description This Power MOSFET is produced using H&M semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features - 40A, 250V, RDS(on) typ. = 0.