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HM4402C - N-Channel Enhancement Mode Power MOSFET

General Description

The HM4402C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =20V,ID =12A RDS(ON) < 9mΩ @ VGS=10V RDS(ON) < 11mΩ @ VGS=10V.
  • High density cell design for ultra low Rdson.
  • Fully characterized Avalanche voltage and current Schematic diagram HM4402C.

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Other Datasheets by H&M Semiconductor

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HM4402A N-Channel Enhancement Mode Power MOSFET
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HM4402C N-Channel Enhancement Mode Power MOSFET Description The HM4402C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.