HM4402E - N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

General Description

The HM4402E uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

VDS =20V,ID =14A RDS(ON).

📥 Download Datasheet

HM4402E n-channel enhancement mode power mosfet by H&M Semiconductor - Datasheet Preview

Datasheet Details

Part number	HM4402E
Manufacturer	H&M Semiconductor
File Size	381.50 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM4402E Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
HM44	NPN EPITAXIAL PLANAR TRANSISTOR	Hi-Sincerity Mocroelectronics
HM4430	N-Channel 30V MOSFET	VBsemi
HM4454	N-Channel 100V MOSFET	VBsemi
HM4487	P-Channel 100V MOSFET	VBsemi
HM4488	N-Channel 150-V MOSFET	VBsemi

Other Datasheets by H&M Semiconductor

Part Number	Description
HM4402A	N-Channel Enhancement Mode Power MOSFET
HM4402B	N-Channel Enhancement Mode Power MOSFET
HM4402C	N-Channel Enhancement Mode Power MOSFET
HM4402D	N-Channel Enhancement Mode Power MOSFET
HM4404	Fast Boost Charge Buck Regulator

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Description The HM4402E uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =20V,ID =14A RDS(ON) <7 mΩ @ VGS=4.5V RDS(ON) <9 mΩ @ VGS=2.