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HM4421C - P-Channel Enhancement Mode Power MOSFET

Description

The HM& uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications.

Features

  • VDS =-60V,ID =-5A RDS(ON).

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P-Channel Enhancement Mode Power MOSFET Description The HM& uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features ● VDS =-60V,ID =-5A RDS(ON) <120mΩ @ VGS=-10V RDS(ON) <170mΩ @ VGS=-4.
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