The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
HM4441A
N Channel Enhancement Mode MOSFET
SCRIPTION
HM4441A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, noteook power management ane ther battery powered circuits where high-side witching.
PIN CONFIGURATION SOP-8
FEATURE
l -60V/-6.0A, RDS(ON) = 55mΩ (Typ.) @VGS =-10V
l -60V/-5.0A, RDS(ON) = 73mΩ @VGS = -4.
HM4441A Datasheet
