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HM4444 - N-Channel Enhancement Mode Power MOSFET

Product Overview

H&M Semiconductor

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HM4444 N-Channel Enhancement Mode Power MOSFET by H&M Semiconductor - Datasheet Preview — Datasheet preview – HM4444

Datasheet Details

Part number	HM4444
Manufacturer	H&M Semiconductor
File Size	534.88 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM4444 Datasheet
Additional preview pages of the HM4444 datasheet.

Product details

Description

The HM4444 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS =80V,ID =12.5A RDS(ON) < 16mΩ @ VGS=10V (Typ:13mΩ).
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability Schematic diagram.

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Published: Nov 27, 2018 |