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HM4449 - P-Channel Enhancement Mode Power MOSFET

Product Overview

H&M Semiconductor

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HM4449 P-Channel Enhancement Mode Power MOSFET by H&M Semiconductor - Datasheet Preview — Datasheet preview – HM4449

Datasheet Details

Part number	HM4449
Manufacturer	H&M Semiconductor
File Size	464.12 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	HM4449 Datasheet
Additional preview pages of the HM4449 datasheet.

Product details

Description

The HM4449 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

VDS = -30V,ID = -7A RDS(ON) < 70mΩ @ VGS=-4.5V RDS(ON) < 42mΩ @ VGS=-10V.
High Power and current handing capability.
Lead free product is acquired.
Surface mount package.

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Published: Nov 27, 2018 |