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HM4452 - N-Channel Enhancement Mode Power MOSFET

General Description

The +0 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS = 100V,ID =10A RDS(ON) < 17mΩ @ VGS=10V (Typ:14mΩ).
  • Special process technology for high ESD capability.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current Schematic diagram.

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Other Datasheets by H&M Semiconductor

Part Number Description
HM4450 N-Channel Enhancement Mode Power MOSFET
HM4450A N-Channel Enhancement Mode Power MOSFET
HM4453 P-Channel Enhancement Mode Power MOSFET
HM4453A P-Channel Enhancement Mode Power MOSFET
HM4453B P-Channel Enhancement Mode Power MOSFET

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HM4452 N-Channel Enhancement Mode Power MOSFET Description The +0 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.