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HM4482 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • z VDSS=100V／VGSS=±20V／ID=2.5A RDS(ON)=105mΩ(Max. )@VGS=10V RDS(ON)=115mΩ(Max. )@VGS=4.5V z ESD protect z Reliable and Rugged z High Density Cell Design For Ultra Low On-Resistance   Switching Time Test Circuit and Waveforms H SOP-8 top view HM4482 HM4482 Rev. A.0.
  • Feb. , 2012 SOP-8 - 1 - - HM4482 100VDS／±20VGS／2.5A(ID) N-Channel Enha ncement Mode MOSFET Absolute Maximum Ratings (TA=25°C unless otherwise noted) Symbol VDSS VGSS Drain-Source Voltage Gate.
  • Source.

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HM4482 100VDS／±20VGS／2.5A(ID) N-Channel Enha ncement Mode MOSFET Features z VDSS=100V／VGSS=±20V／ID=2.5A RDS(ON)=105mΩ(Max.)@VGS=10V RDS(ON)=115mΩ(Max.)@VGS=4.5V z ESD protect z Reliable and Rugged z High Density Cell Design For Ultra Low On-Resistance   Switching Time Test Circuit and Waveforms H SOP-8 top view HM4482 HM4482 Rev. A.0 – Feb., 2012 SOP-8 - 1 - - HM4482 100VDS／±20VGS／2.5A(ID) N-Channel Enha ncement Mode MOSFET Absolute Maximum Ratings (TA=25°C unless otherwise noted) Symbol VDSS VGSS Drain-Source Voltage Gate –Source Voltage Parameter ID1 Continuous Drain Current IDM1 300us Pulsed Drain Current Tested IS1 Diode Continuous Forward Current EAS2 Avalanche Energy, Single Plused(L=0.