The HM4487A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
It is ESD protested.
| Part number | HM4487A |
|---|---|
| Manufacturer | H&M Semiconductor |
| File Size | 474.70 KB |
| Description | P-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 HM4487A Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| HM4487 | P-Channel 100V MOSFET | VBsemi |
| HM4488 | N-Channel 150-V MOSFET | VBsemi |
| HM44 | NPN EPITAXIAL PLANAR TRANSISTOR | Hi-Sincerity Mocroelectronics |
| HM4430 | N-Channel 30V MOSFET | VBsemi |
| HM4454 | N-Channel 100V MOSFET | VBsemi |
| Part Number | Description |
|---|---|
| HM4487 | P-Channel Enhancement Mode Power MOSFET |
| HM4487B | P-Channel Enhancement Mode Power MOSFET |
| HM4480 | N-Channel Enhancement Mode Power MOSFET |
| HM4482 | N-Channel Enhancement Mode Power MOSFET |
| HM4484 | N-Channel Enhancement Mode Power MOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
