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HM4488 - N-Channel Enhancement Mode Power MOSFET

Product Overview

H&M Semiconductor

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HM4488 N-Channel Enhancement Mode Power MOSFET by H&M Semiconductor - Datasheet Preview — Datasheet preview – HM4488

Datasheet Details

Part number	HM4488
Manufacturer	H&M Semiconductor
File Size	450.46 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM4488 Datasheet
Additional preview pages of the HM4488 datasheet.

Product details

Description

The HM4488 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS =150V,ID =5.2A RDS(ON) < 44mΩ @ VGS=10V （Typ：31mΩ） Schematic diagram.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Low gate to drain charge to reduce switching losses +0.

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Published: Nov 27, 2018 |