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HM4616D - N And P-Channel Enhancement Mode MOSFET

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H&M Semiconductor

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HM4616D N And P-Channel Enhancement Mode MOSFET by H&M Semiconductor - Datasheet Preview — Datasheet preview – HM4616D

Datasheet Details

Part number	HM4616D
Manufacturer	H&M Semiconductor
File Size	969.62 KB
Description	N And P-Channel Enhancement Mode MOSFET
Datasheet	HM4616D Datasheet
Additional preview pages of the HM4616D datasheet.

HM4616D Product details

Description

The HM4616D uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Features

N-channel： VDS =30V,ID =35A RDS(ON)=5.5mΩ (typical) @ VGS=10V RDS(ON)=7.8mΩ (typical) @ VGS=4.5V P-Channel： VDS =-30V,ID =-18A RDS(ON)=15mΩ (typical) @ VGS=-10V RDS(ON)=20mΩ (typical) @ VGS=-4.5V.
Excellent gate charge x RDS(ON) product(FOM).
Very low on-resistance RDS(ON).
150 °C operating temperature.
Pb-free lead plating.
100% UIS tested 100% UIS TESTED!.

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Published: Jul 1, 2025 |