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HM4616D - N And P-Channel Enhancement Mode MOSFET

General Description

The HM4616D uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Key Features

  • N-channel： VDS =30V,ID =35A RDS(ON)=5.5mΩ (typical) @ VGS=10V RDS(ON)=7.8mΩ (typical) @ VGS=4.5V P-Channel： VDS =-30V,ID =-18A RDS(ON)=15mΩ (typical) @ VGS=-10V RDS(ON)=20mΩ (typical) @ VGS=-4.5V.
  • Excellent gate charge x RDS(ON) product(FOM).
  • Very low on-resistance RDS(ON).
  • 150 °C operating temperature.
  • Pb-free lead plating.
  • 100% UIS tested 100% UIS TESTED!.

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HM' N And P-Channel Enhancement Mode MOSFET Description Schematic diagram The HM4616D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features  N-channel： VDS =30V,ID =35A RDS(ON)=5.5mΩ (typical) @ VGS=10V RDS(ON)=7.8mΩ (typical) @ VGS=4.5V P-Channel： VDS =-30V,ID =-18A RDS(ON)=15mΩ (typical) @ VGS=-10V RDS(ON)=20mΩ (typical) @ VGS=-4.