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HM4612 Datasheet N & P-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

Overview: N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N 加 P 沟道增强型 MOS 管 HM N-CH VDS= 60V RDS(ON), Vgs@10V, Ids@4.5A = 48mΩ RDS(ON), Vgs@4.5V, Ids@3A = 60mΩ P-CH VDS= - 60V RDS(ON), Vgs@-10V, Ids@-3.2A = 110mΩ RDS(ON), Vgs@-4.5V, Ids@-2.

Key Features

  • 特性 Advanced trench process technology 高级的加工技术 High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM 改良的成形工艺 极低的导通电阻高密度的单元设计 Package Dimensions 封装尺寸及外形图 4612 REF. A B C D E F Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP. Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) 25 oC 极限参数和热特性 Pa.

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