HM4612D
HM4612D is N & P-Channel Enhancement Mode Power MOSFET manufactured by H&M Semiconductor.
N and P-Channel Enhancement Mode Power MOSFET
Description
The HM4612D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The plementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
General Features
- N-Channel VDS =12V,ID =5A RDS(ON) <32mΩ @ VGS=4.5V RDS(ON) <42mΩ @ VGS=2.5V RDS(ON) < 80mΩ @ VGS=1.8V
- P-Channel VDS = -12V,ID = -5A RDS(ON) <74mΩ @ VGS=-4.5V RDS(ON) <110mΩ @ VGS=-2.5V RDS(ON) < 220mΩ @ VGS=-1.8V
- Load Switch for Portable Devices
N-channel
P-channel
Pin assignment
Package Marking and Ordering Information
Device Marking
12-
- Device
Device Package
DFN2X2-6L
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