HM4611Q Datasheet N And P-channel Enhancement Mode MOSFET

Manufacturer: H&M Semiconductor

Overview: HM4611Q N And P-Channel Enhancement Mode MOSFET.

Datasheet Details

Part number	HM4611Q
Manufacturer	H&M Semiconductor
File Size	846.65 KB
Description	N And P-Channel Enhancement Mode MOSFET
Datasheet	HM4611Q-HMSemiconductor.pdf

Schematic diagram The HM4611Q uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

The plementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

General

N-channel： VDS =60V,ID =10A RDS(ON)=34mΩ (typical) @ VGS=10V RDS(ON)=46mΩ (typical) @ VGS=4.5V P-Channel： VDS =-60V,ID =-10A RDS(ON)=85mΩ (typical) @ VGS=-10V RDS(ON)=135mΩ (typical) @ VGS=-4.5V.
Excellent gate charge x RDS(ON) product(FOM).
Very low on-resistance RDS(ON).
150 °C operating temperature.
Pb-free lead plating.
100% UIS tested 100% UIS TESTED!.

Part Number	Description
HM4611	N and P-Channel Enhancement Mode Power MOSFET
HM4611A	N & P-Channel Enhancement Mode Power MOSFET
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