HM4611Q
HM4611Q is N And P-Channel Enhancement Mode MOSFET manufactured by H&M Semiconductor.
N And P-Channel Enhancement Mode MOSFET
Description
Schematic diagram
The HM4611Q uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The plementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
General Features
- N-channel：
VDS =60V,ID =10A RDS(ON)=34mΩ (typical) @ VGS=10V RDS(ON)=46mΩ (typical) @ VGS=4.5V P-Channel：
VDS =-60V,ID =-10A RDS(ON)=85mΩ (typical) @ VGS=-10V RDS(ON)=135mΩ (typical) @ VGS=-4.5V
- Excellent gate charge x RDS(ON) product(FOM)
- Very low on-resistance RDS(ON)
- 150 °C operating temperature
- Pb-free lead plating
- 100% UIS tested
100% UIS TESTED!
Application...
