HM4611B Description
The HM4611B uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The plementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
HM4611B Key Features
- N-Channel VDS = 60V,ID =6.3A RDS(ON) < 30mΩ @ VGS=10V
- P-Channel VDS = -60V,ID = -6A RDS(ON) < 80mΩ @ VGS=-10V
- High power and current handing capability
- Lead free product is acquired
- Surface mount package