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HM4611B

Manufacturer: H&M Semiconductor

HM4611B datasheet by H&M Semiconductor.

HM4611B datasheet preview

HM4611B Datasheet Details

Part number HM4611B
Datasheet HM4611B-HMSemiconductor.pdf
File Size 579.05 KB
Manufacturer H&M Semiconductor
Description N & P-Channel Enhancement Mode Power MOSFET
HM4611B page 2 HM4611B page 3

HM4611B Overview

The HM4611B uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The plementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

HM4611B Key Features

  • N-Channel VDS = 60V,ID =6.3A RDS(ON) < 30mΩ @ VGS=10V
  • P-Channel VDS = -60V,ID = -6A RDS(ON) < 80mΩ @ VGS=-10V
  • High power and current handing capability
  • Lead free product is acquired
  • Surface mount package
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HM4611B Distributor

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