HM4887 - Dual P-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

General Description

The HM4887 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

It is ESD protested.

Key Features

VDS =-100V,ID =-4.5A RDS(ON).

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HM4887 dual p-channel enhancement mode power mosfet by H&M Semiconductor - Datasheet Preview

Datasheet Details

Part number	HM4887
Manufacturer	H&M Semiconductor
File Size	505.22 KB
Description	Dual P-Channel Enhancement Mode Power MOSFET
Datasheet	HM4887 Datasheet

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HM4887 Dual P-Channel Enhancement Mode Power MOSFET Description The HM4887 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. D1 G1 G2 D2 General Features ● VDS =-100V,ID =-4.