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HM4N10D - N-Channel Enhancement Mode Power MOSFET

General Description

The HM4N10D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS =100V,ID =4A RDS(ON).

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N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4N10D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS =100V,ID =4A RDS(ON) <160mΩ @ VGS=10V RDS(ON) <170mΩ @ VGS=4.