HM4N65F - 650V N-Channel MOSFET

This page provides the datasheet information for the HM4N65F, a member of the HM4N65 650V N-Channel MOSFET family.

Product Overview

H&M Semiconductor

Datasheet Details

Part number	HM4N65F
Manufacturer	H&M Semiconductor
File Size	416.61 KB
Description	650V N-Channel MOSFET
Datasheet	HM4N65F Datasheet
Additional preview pages of the HM4N65F datasheet.

HM4N65F Product details

Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode.

Features

4.0A, 650V, RDS(on) = 3.0 @VGS = 10 V.
Low gate charge ( typical 15nC).
High ruggedness.
Fast wsitching.
100% avalanche tested.
Improved dv/dt capability Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2).

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Published: Jul 1, 2025 |