HM50N06A - N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

General Description

The HM50N06A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

VDS =60V,ID =50A RDS(ON).

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HM50N06A n-channel enhancement mode power mosfet by H&M Semiconductor - Datasheet Preview

Datasheet Details

Part number	HM50N06A
Manufacturer	H&M Semiconductor
File Size	529.83 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM50N06A Datasheet

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HM50N06A N-Channel Enhancement Mode Power MOSFET Description The HM50N06A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.