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HM50N06D Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

Overview: HM50N06D N-Channel Enhancement Mode Power MOSFET.

General Description

The HM50N06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

General

Key Features

  • VDS = 60V,ID =50A RDS(ON) < 6.5mΩ @ VGS=10V (Typ:5mΩ).
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Low gate to drain charge to reduce switching losses Schematic diagram.

Similar Datasheet

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HM50N06D Distributor