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HM5N50K - Lonten N-channel 500V 5A Power MOSFET

General Description

The Power MOSFET is fabricated using the advanced planar VDMOS technology.

The resulting device has low conduction resistance,superior switching performance and high avalanche energy.

+01.

Key Features

  • Pin Configuration.
  • Low RDS(on).
  • Low gate charge (typ. Qg =9.5nC).
  • 100% UIS tested.
  • RoHS compliant.

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Full PDF Text Transcription for HM5N50K (Reference)

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Lonten N-channel 500V, 5A Power MOSFET Description The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resi...

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planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy. Product Summary VDSS 500V ID 5A RDS(on),typ 2.0Ω Qg,typ 9.5nC +01. Features Pin Configuration ⚫ Low RDS(on) ⚫ Low gate charge (typ. Qg =9.5nC) ⚫ 100% UIS tested ⚫ RoHS compliant Applications ⚫ Power factor correction. ⚫ Switched mode power supplies. ⚫ LED driver.