HM5N60K - 600V N-Channel MOSFET

Product Overview

H&M Semiconductor

Datasheet Details

Part number	HM5N60K
Manufacturer	H&M Semiconductor
File Size	448.63 KB
Description	600V N-Channel MOSFET
Datasheet	HM5N60K Datasheet
Additional preview pages of the HM5N60K datasheet.

HM5N60K Product details

Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

4.5A, 600V, RDS(on) = 2.50Ω @VGS = 10 V.
Low gate charge ( typical 16nC).
High ruggedness.
Fast switching.
100% avalanche tested.
Improved dv/dt capability {D.
TO-252 TO-251 ◀▲ {G.
{S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage.

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Published: Sep 1, 2016 |