HM5N65 - 650V N-Channel MOSFET

Product Overview

H&M Semiconductor

Datasheet Details

Part number	HM5N65
Manufacturer	H&M Semiconductor
File Size	446.30 KB
Description	650V N-Channel MOSFET
Datasheet	HM5N65 Datasheet
Additional preview pages of the HM5N65 datasheet.

HM5N65 Product details

Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode.

Features

4.5A, 650V, RDS(on) = 3.0 @VGS = 10 V.
Low gate charge ( typical 15nC).
High ruggedness.
Fast wsitching.
100% avalanche tested.
Improved dv/dt capability Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter+01+01)8QLWV VDSS Drain-Source Voltage 650 V ID Drain Current - Continuous (TC = 25°C) 4.5 4.5.
A - Continuous (TC = 100°C.

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Published: Jul 1, 2025 |