Datasheet Details
| Part number | HM5N65 |
|---|---|
| Manufacturer | H&M Semiconductor |
| File Size | 446.30 KB |
| Description | 650V N-Channel MOSFET |
| Datasheet |
 HM5N65 Datasheet
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General Description
This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.
This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode.
Key Features
- 4.5A, 650V, RDS(on) = 3.0 @VGS = 10 V.
- Low gate charge ( typical 15nC).
- High ruggedness.
- Fast wsitching.
- 100% avalanche tested.
- Improved dv/dt capability Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter+01+01)8QLWV VDSS Drain-Source Voltage 650 V ID Drain Current - Continuous (TC = 25°C) 4.5 4.5.
- A - Continuous (TC = 100°C.