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HM5N60I - 600V N-Channel MOSFET

Download the HM5N60I datasheet PDF. This datasheet also covers the HM5N60K variant, as both devices belong to the same 600v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • 4.5A, 600V, RDS(on) = 2.50Ω @VGS = 10 V.
  • Low gate charge ( typical 16nC).
  • High ruggedness.
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability {D.
  • TO-252 TO-251 ◀▲ {G.
  • {S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Vo.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HM5N60K-HMSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for HM5N60I (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HM5N60I. For precise diagrams, and layout, please refer to the original PDF.

HM5N60K / HM5N60I HM5N60K / HM5N60I 600V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This a...

View more extracted text
roduced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features • 4.5A, 600V, RDS(on) = 2.

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