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HM5N65F - 650V N-Channel MOSFET

Download the HM5N65F datasheet PDF. This datasheet also covers the HM5N65 variant, as both devices belong to the same 650v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode.

Key Features

  • 4.5A, 650V, RDS(on) = 3.0 @VGS = 10 V.
  • Low gate charge ( typical 15nC).
  • High ruggedness.
  • Fast wsitching.
  • 100% avalanche tested.
  • Improved dv/dt capability Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter+01+01)8QLWV VDSS Drain-Source Voltage 650 V ID Drain Current - Continuous (TC = 25°C) 4.5 4.5.
  • A - Continuous (TC = 100°C.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HM5N65-HMSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for HM5N65F (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HM5N65F. For precise diagrams, and layout, please refer to the original PDF.

+01 / +01) +01 / +01) 650V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This adv...

View more extracted text
duced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode. These devices are well suited for low vo ltage ap plications su ch as DC/DC converters a nd hig h efficiency switching for power management in portable and battery operated products. Features • 4.5A, 650V, RDS(on) = 3.

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