The HM6409 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
This device is suitable for use as a load switch or in PWM applications.
| Part number | HM6409 |
|---|---|
| Manufacturer | H&M Semiconductor |
| File Size | 807.60 KB |
| Description | P-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 HM6409 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| HM64 | PNP EPITAXIAL PLANAR TRANSISTOR | Hi-Sincerity Mocroelectronics |
| HM64YLB36514 | 16M Synchronous Late Write Fast Static RAM | Renesas Technology |
| HM6-6617B883 | 2K x 8 CMOS PROM | Intersil Corporation |
| HM6-6642-9 | 512 x 8 CMOS PROM | Intersil Corporation |
| HM6-6642B-9 | 512 x 8 CMOS PROM | Intersil Corporation |
| Part Number | Description |
|---|---|
| HM640 | N-channel Enhanced VDMOSFET |
| HM6400 | N-Channel Enhancement Mode Power MOSFET |
| HM6401 | P-Channel Enhancement Mode Power MOSFET |
| HM6408 | N-Channel Enhancement Mode Power MOSFET |
| HM603K | N&P-Channel complementary Power MOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
