HM6602 - N & P-Channel Enhancement Mode Power MOSFET

Product Overview

H&M Semiconductor

Datasheet Details

Part number	HM6602
Manufacturer	H&M Semiconductor
File Size	1.09 MB
Description	N & P-Channel Enhancement Mode Power MOSFET
Datasheet	HM6602 Datasheet
Additional preview pages of the HM6602 datasheet.

Product details

Description

The HM6602 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a Battery protection or in other Switching application.General

Features

N-Channel VDS = 30V,ID = 3.6A RDS(ON) < 73mΩ @ VGS=4.5V RDS(ON).

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Published: Nov 27, 2018 |