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HM6602 - N & P-Channel Enhancement Mode Power MOSFET

General Description

excellent RDS(ON) and low gate charge .

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • N-Channel VDS = 30V,ID = 3.6A RDS(ON) < 73mΩ @ VGS=4.5V RDS(ON).

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HM6602 N and P-Channel Enhancement Mode Power MOSFET Description The HM6602 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device is suitable for use as a Battery protection or in other Switching application. General Features ● N-Channel VDS = 30V,ID = 3.6A RDS(ON) < 73mΩ @ VGS=4.5V RDS(ON) <58mΩ @ VGS=10V ● P-Channel VDS = -30V,ID = -2.5A RDS(ON) < 130mΩ @ VGS=-10V RDS(ON) < 180mΩ @ VGS=-4.