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HM7N65F - 650V N-Channel MOSFET

Download the HM7N65F datasheet PDF. This datasheet also covers the HM7N65 variant, as both devices belong to the same 650v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode.

Key Features

  • 7.0A, 650V, RDS(on) = 1.26Ω @VGS = 10 V.
  • Low gate charge ( typical 29nC).
  • High ruggedness.
  • Fast wsitching.
  • 100% avalanche tested.
  • Improved dv/dt capability {D GDS TO-220 GD S TO-220F.
  • ◀▲ {G.
  • {S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Ga.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HM7N65-HMSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by H&M Semiconductor

Part Number Description
HM7N65 650V N-Channel MOSFET
HM7N80 800V N-Channel MOSFET
HM7N80F 800V N-Channel MOSFET
HM7000 MOSFET
HM7002 N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HM7N65 / HM7N65F HM7N65 / HM7N65F 650V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency sw itched mode power supp lies, active power factor corr ection based on half br idge topology. Features • 7.0A, 650V, RDS(on) = 1.