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HM7N80F - 800V N-Channel MOSFET

Download the HM7N80F datasheet PDF. This datasheet also covers the HM7N80 variant, as both devices belong to the same 800v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • 7.0A, 800V, RDS(on) = 1.90Ω @VGS = 10 V.
  • Low gate charge ( typical 27nC).
  • High ruggedness.
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability GDS TO-220 GD S TO-220F {.
  • ◀▲ {.
  • { Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HM7N80-HMSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by H&M Semiconductor

Part Number Description
HM7N80 800V N-Channel MOSFET
HM7N65 650V N-Channel MOSFET
HM7N65F 650V N-Channel MOSFET
HM7000 MOSFET
HM7002 N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HM7N80 / HM7N80F HM7N80 / HM7N80F 800V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features • 7.0A, 800V, RDS(on) = 1.