HM7N80F - 800V N-Channel MOSFET

This page provides the datasheet information for the HM7N80F, a member of the HM7N80 800V N-Channel MOSFET family.

Product Overview

H&M Semiconductor

Datasheet Details

Part number	HM7N80F
Manufacturer	H&M Semiconductor
File Size	304.82 KB
Description	800V N-Channel MOSFET
Datasheet	HM7N80F Datasheet
Additional preview pages of the HM7N80F datasheet.

HM7N80F Product details

Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

7.0A, 800V, RDS(on) = 1.90Ω @VGS = 10 V.
Low gate charge ( typical 27nC).
High ruggedness.
Fast switching.
100% avalanche tested.
Improved dv/dt capability GDS TO-220 GD S TO-220F {.
◀▲ {.
{ Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-.

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Published: Jul 15, 2025 |