Datasheet4U Logo Datasheet4U.com

HM80N06 - N-Channel Enhancement Mode Power MOSFET

General Description

The HM80N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =60V,ID =80A RDS(ON) =6.0mΩ(Typ) @ VGS=10V.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HM80N03K N-Channel Power MOSFET H&M semi
HM810 Ultra-compact high-power electromagnetic relay Hongfa Technology
HM8202 Standalone Li-Ion Switch Mode Battery Charger H&M semi
HM82C11 Printer Adapter Interface HMC
HM8348 Mouse Controller HMC

Other Datasheets by H&M Semiconductor

Part Number Description
HM80N03 N-Channel Enhancement Mode Power MOSFET
HM80N03KA N-Channel Enhancement Mode Power MOSFET
HM80N04K N-Channel Enhancement Mode Power MOSFET
HM80N70 N-Channel Enhancement Mode Power MOSFET
HM8002D mono class AB audio power amplifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
N-Channel Enhancement Mode Power MOSFET Description The HM80N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON) =6.